Three-phase full-wave bridge, 6 diodes interconnected in a molded plastic encapsulated case, hexagon shaped case, 5 lug terminals, 2-0.140 in. Diameter unthreaded mtg holes counterbored 0.250 in. By 0.125 in. Mtg holes spaced 1.700 in. Min to 1.750 in. Max c to c; 8.0 amp dc output current; 100v peak reverse voltage per cell
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5998-00-530-7185
NSN 4140-01-459-7411
NSN 6650-00-007-4372
NSN 6135-00-937-4118
NSN 5925-01-200-6283
NSN 5945-01-093-8497
NSN 5950-01-276-2144
NSN 5855-01-157-3093
NSN 6220-01-352-7833
NSN 5935-01-361-6401
NSN 5910-00-480-9560
NSN 6685-00-283-2282