Three-phase full-wave bridge, 6 diodes interconnected in a molded plastic encapsulated case, hexagon shaped case, 5 lug terminals, 2-0.140 in. Diameter unthreaded mtg holes counterbored 0.250 in. By 0.125 in. Mtg holes spaced 1.700 in. Min to 1.750 in. Max c to c; 8.0 amp dc output current; 100v peak reverse voltage per cell
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6320-01-194-1253
NSN 7035-00-312-3055
NSN 5915-00-769-5752
NSN 5985-01-417-1308
NSN 6105-01-292-7392
NSN 5999-00-146-8632
NSN 5895-01-510-4198
NSN 5950-01-006-5068
NSN 6145-01-257-7786
NSN 6220-01-289-0196
NSN 6135-00-276-7625
NSN 5930-01-391-5010