0C72

Transistor

NSN 5961-00-066-0381

DEMIL

Shelf Life

UOM

NIIN

Demil:

Shelf Life:

N/A

UOM:

1 EA

NIIN:

000660381

Detail Specifications

Inclosure Material:

Metal

Overall Length:

0.619 inches

Terminal Length:

1.460 inches

Overall Diameter:

0.236 inches

Internal Configuration:

Junction contact

Internal Junction Configuration:

Pnp

Mounting Method:

Terminal

Terminal Circle Diameter:

0.116 inches

Features Provided:

Hermetically sealed case

Semiconductor Material:

Germanium

Voltage Rating In Volts Per Characteristic:

35.0 breakdown voltage, collector-to-base, emitter open and 25.0 breakdown voltage, collector-to-emitter, base open and 12.0 breakdown voltage, emitter-to-base, collector open

Current Rating Per Characteristic:

125.00 milliamperes source cutoff current

Current Rating Per Characteristic:

125.00 milliamperes collector current, dc

Power Rating Per Characteristic:

165.0 milliwatts small-signal input power, common-collector

Power Rating Per Characteristic:

165.0 milliwatts collector power dissipation

Maximum Operating Tempurature Per Measurement Point:

80.0 degrees celsius junction

Terminal Type And Quantity:

3 uninsulated wire lead

NSN:

5961-00-066-0381

Item Name:

Hexfet Power Mosfet

Cage Code:

K2555

Manufacturer Part Numbers

Part Number

Cage

RNCC

RNVC

RNAAC

Status

MSDS

SADC

Part Number:

3522-950-19700

Cage Code:

52361

RNCC:

RNVC:

RNAAC:

Status:

MSDS:

SADC:

Part Number:

0C72

Cage Code:

U2248

RNCC:

RNVC:

RNAAC:

Status:

MSDS:

SADC:

Part Identification

INC

FIIG

Concept No.

App. Key

Cond. Code

Status

INC:

20588

FIIG:

A110A0

Concept No.:

App. Key:

Cond. Code:

Status:

Part Materials

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators

HMIC

PMIC

ESD/EMI

ENAC

MMAC

CRITL

HMIC:

PMIC:

ESD:

MMAC:

CRITL:

Packaging & Shipping

Est. Pack Size

Est. Pack Weight

Est. Item Weight

Est. Item Dim.

Pack Size:

Paclk Weight:

Item Weight:

Item Dim:

OPI

SPI No.

SPI Rev.

SPC Mkg.

LVL A

LVL B

OPI:

SPI No.:

SPI Rev.:

SPC Mkg:

LVL_A:

LVL_B:

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Pricing & Availability

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Definition Definition of approved item name (AIN): "Hexfet Power Mosfet"

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.