Metal case; 650.0 zener volts; 2.0 ma current; operating temperature max 60.0 degree celsius; 3.188 in. Lg; 1.000 in. Max w; 1.000 in. Max h; three turret type terminals 0.562 in. Lg
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6240-01-439-2670
NSN 6610-00-231-9651
NSN 5915-01-277-8189
NSN 5855-00-928-1912
NSN 6150-01-623-9676
NSN 5925-01-573-2499
NSN 4140-01-647-0707
NSN 5990-01-249-8212
NSN 5935-01-401-5324
NSN 5920-01-345-5433
NSN 5996-01-506-7585
NSN 4140-00-751-1694