Forward current (continuous/average) 1ma; max reverse voltage 36v; substrat material-silicium; contact construction-metallurgically bonded; quality level 25; thermal resistance junction to case 10cel/w; max junction temp 175deg c; total power dissipation 1mw; package type d0202aa; package material-metal etanche; package shape-cylindrique, sorties axiales; number of package pins 2
No other part numbers with same form, fit, and function found.
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
Classification: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less
NSN 5935-01-108-4615
NSN 5910-01-350-8099
NSN 5905-01-481-0957
NSN 5905-01-466-2037
NSN 6135-00-900-2139
NSN 6105-01-155-4996
NSN 6130-00-790-0071
NSN 5855-00-327-2112
NSN 2925-00-386-1127
NSN 6110-01-574-7638
NSN 5950-01-009-5182
NSN 5985-01-062-4295