Forward current (continuous/average) 1ma; max reverse voltage 36v; substrat material-silicium; contact construction-metallurgically bonded; quality level 25; thermal resistance junction to case 10cel/w; max junction temp 175deg c; total power dissipation 1mw; package type d0202aa; package material-metal etanche; package shape-cylindrique, sorties axiales; number of package pins 2
No other part numbers with same form, fit, and function found.
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
Classification: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less
NSN 5905-01-366-0485
NSN 6610-00-490-9514
NSN 6145-00-296-0085
NSN 7035-00-135-4758
NSN 6130-01-350-3585
NSN 5985-01-049-5455
NSN 5935-00-068-4132
NSN 6145-00-226-4083
NSN 6220-01-038-8292
NSN 6110-01-179-3669
NSN 5996-00-475-9778
NSN 5935-01-280-9400