Forward current (continuous/average) 1ma; max reverse voltage 36v; substrat material-silicium; contact construction-metallurgically bonded; quality level 25; thermal resistance junction to case 10cel/w; max junction temp 175deg c; total power dissipation 1mw; package type d0202aa; package material-metal etanche; package shape-cylindrique, sorties axiales; number of package pins 2
No other part numbers with same form, fit, and function found.
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
Classification: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less
NSN 5910-01-108-3204
NSN 6620-01-181-1757
NSN 6130-00-100-0175
NSN 6110-01-397-8803
NSN 5975-00-382-6883
NSN 5985-00-354-3295
NSN 6105-00-715-0842
NSN 7035-01-582-0265
NSN 5930-00-192-1857
NSN 5945-00-260-4333
NSN 6220-00-864-4891
NSN 6240-00-146-5698