Forward current (continuous/average) 1ma; max reverse voltage 36v; substrat material-silicium; contact construction-metallurgically bonded; quality level 25; thermal resistance junction to case 10cel/w; max junction temp 175deg c; total power dissipation 1mw; package type d0202aa; package material-metal etanche; package shape-cylindrique, sorties axiales; number of package pins 2
No other part numbers with same form, fit, and function found.
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
Classification: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less
NSN 6145-00-596-8447
NSN 6150-00-971-7079
NSN 6620-01-152-0936
NSN 7035-01-302-3356
NSN 5895-01-167-8477
NSN 6650-00-776-7200
NSN 6610-00-997-6876
NSN 5998-01-272-9572
NSN 6240-00-776-1614
NSN 5920-01-514-5912
NSN 5835-01-592-2350
NSN 6150-01-513-5405