Forward current (continuous/average) 1ma; max reverse voltage 36v; substrat material-silicium; contact construction-metallurgically bonded; quality level 25; thermal resistance junction to case 10cel/w; max junction temp 175deg c; total power dissipation 1mw; package type d0202aa; package material-metal etanche; package shape-cylindrique, sorties axiales; number of package pins 2
No other part numbers with same form, fit, and function found.
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
Classification: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less
NSN 5895-00-269-2697
NSN 5998-01-218-5227
NSN 5999-01-590-5769
NSN 6620-01-371-1655
NSN 5925-01-401-5314
NSN 6220-01-262-5928
NSN 6320-01-476-0686
NSN 5915-01-363-9524
NSN 5920-00-620-0380
NSN 5985-01-262-7790
NSN 5905-01-601-6588
NSN 5990-01-443-2931