Hsemiconductor rectifier bridge three phase; 2.240 in. Min and 2.260 in. Max o/a lg; 1.870 in. Min and 1.880 in. Max distance center to center of 2 mtg holes; 0.164 in. Min and 0.174 in. Max diameter mtg holes
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5930-01-430-5513
NSN 5855-00-489-6754
NSN 5855-01-100-3272
NSN 6645-00-857-0410
NSN 5915-01-219-1327
NSN 5999-01-298-9371
NSN 5990-00-702-2873
NSN 4140-01-323-4279
NSN 5998-00-117-4566
NSN 6240-01-357-0305
NSN 5960-01-550-8038
NSN 6220-01-622-6717