Silicon; 3-phase bridge rectifier; hermetically sealed; m55 to p150 degrees c operating temp; 1.000 in. Lg; 0.420 in. W; 0.180 in. H; 5 terminals; storage temp range: m62.0 to p150.0 degrees celcius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5950-01-360-0923
NSN 5925-01-528-1139
NSN 6650-00-952-4500
NSN 5990-01-387-6114
NSN 6150-01-182-0309
NSN 6650-00-769-3003
NSN 6110-01-116-4251
NSN 2925-01-535-7235
NSN 5985-01-449-0432
NSN 6320-01-132-2746
NSN 5935-00-885-4007
NSN 5920-00-483-8088