Silicon; 3-phase bridge rectifier; hermetically sealed; m55 to p150 degrees c operating temp; 1.000 in. Lg; 0.420 in. W; 0.180 in. H; 5 terminals; storage temp range: m62.0 to p150.0 degrees celcius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5996-00-594-8587
NSN 5915-01-094-6921
NSN 5985-00-867-0311
NSN 5985-00-695-4547
NSN 5930-00-961-8944
NSN 5990-01-364-0813
NSN 6320-00-937-5625
NSN 5910-01-112-0290
NSN 6220-01-359-4857
NSN 5985-01-181-5609
NSN 5930-01-050-8267
NSN 6130-01-295-2076