2N1219

Transistor

NSN 5961-00-955-9888

DEMIL
Shelf Life
UOM
NIIN
Demil:
NO
Shelf Life:
N/A
UOM:
1 EA
NIIN:
009559888

Technical Specifications of NSN

Inclosure Material:
Metal
Overall Length:
0.260 inches
Terminal Length:
1.500 inches
Overall Diameter:
0.370 inches
Internal Configuration:
Junction contact
Internal Junction Configuration:
Pnp
Mounting Method:
Terminal
Terminal Circle Diameter:
0.200 inches
Features Provided:
Hermetically sealed case
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
-30.0 breakdown voltage, collector-to-base, emitter open and -25.0 breakdown voltage, collector-to-emitter, base open and -20.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic:
-100.00 milliamperes source cutoff current
Power Rating Per Characteristic:
150.0 milliwatts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point:
150.0 degrees celsius junction
Terminal Type And Quantity:
3 uninsulated wire lead
NSN:
5961-00-955-9888
Item Name:
Hexfet Power Mosfet
Cage Code:
56232

Other Related Parts

Part Number
Cage
RNCC
RNVC
RNAAC
Status
MSDS
SADC
Part Number:
352-0235-00REVA
Cage Code:
95104
RNCC:
3
RNVC:
2
RNAAC:
XX
Status:
A
MSDS:
SADC:
Part Number:
2N1219
Cage Code:
07713
RNCC:
5
RNVC:
9
RNAAC:
XX
Status:
A
MSDS:
SADC:

Part Identification

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Part Materials

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
SPI No.:
SPI Rev.:
SPC Mkg:
99
LVL_A:
E
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

  We Guarantee with Every Order

  •   100% Genuine Manufacturers Parts
  •   Every Product thoroughly Inspected
  •   Sales Record Retention of 7 years
  •   Fast Delivery
  •   HAZMAT Certified
  •   Global Shipping

Pricing & Availability

Submit this form for current pricing and availability quote on part number 2n1219 and/or cross reference parts.
Part / NSN:
Qty:
Your Email:
Phone:
Ref. / PO #:
Company:

We do not share or sell your information to anyone.
Privacy | Terms

Definition Definition of approved item name (AIN): "Hexfet Power Mosfet"

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

MOE Major Organizational Entities

Entity
DSOR
User:
SPAIN Spain
DSOR:
User:
TURKEY Turkey
DSOR:
Import / Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Classification: Semiconductor devices, nesoi


Best-Selling Products A collection of our most popular products