2N1700

Transistor

NSN 5961-00-022-9845

DEMIL

Shelf Life

UOM

NIIN

Demil:

Shelf Life:

N/A

UOM:

1 EA

NIIN:

000229845

Detail Specifications

Inclosure Material:

Metal

Overall Length:

0.260 inches

Overall Diameter:

0.370 inches

Internal Configuration:

Junction contact

Internal Junction Configuration:

Npn

Mounting Method:

Terminal

Features Provided:

Hermetically sealed case

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

60.0 collector to base voltage, dc and 40.0 collector to emitter voltage, dc and 6.0 emitter to base voltage, dc

Current Rating Per Characteristic:

0.75 amperes base current, dc and 1.00 amperes collector current, dc

Power Rating Per Characteristic:

5.0 watts small-signal input power, common-collector preset

Maximum Operating Tempurature Per Measurement Point:

200.0 degrees celsius junction

Terminal Type And Quantity:

3 uninsulated wire lead

NSN:

5961-00-022-9845

Item Name:

Hexfet Power Mosfet

Cage Code:

49671

Manufacturer Part Numbers

Part Number

Cage

RNCC

RNVC

RNAAC

Status

MSDS

SADC

Part Number:

10525528

Cage Code:

19200

RNCC:

RNVC:

RNAAC:

Status:

MSDS:

SADC:

Part Identification

INC

FIIG

Concept No.

App. Key

Cond. Code

Status

INC:

20588

FIIG:

A110A0

Concept No.:

App. Key:

Cond. Code:

Status:

Part Materials

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators

HMIC

PMIC

ESD/EMI

ENAC

MMAC

CRITL

HMIC:

PMIC:

ESD:

MMAC:

CRITL:

Freight Classification

NMFC

UFC

LTL

LCL

WCC

TCC

SHC

ACC

NMFC:

063025

UFC:

34525

LTL:

RATING VARIABLE

LCL:

100.0

WCC:

658

TCC:

SHC:

ACC:

Instruments/Radio

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Pricing & Availability

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Definition Definition of approved item name (AIN): "Hexfet Power Mosfet"

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.