2N553

Transistor

NSN 5961-00-754-9620

DEMIL
Shelf Life
UOM
NIIN
Demil:
NO
Shelf Life:
N/A
UOM:
1 EA
NIIN:
007549620

Detail Specifications

Inclosure Material:
Metal
Overall Length:
0.500 inches
Overall Diameter:
0.875 inches
Mounting Facility Quantity:
2
Internal Configuration:
Junction contact
Internal Junction Configuration:
Pnp
Mounting Method:
Unthreaded hole
Features Provided:
Hermetically sealed case
Semiconductor Material:
Germanium
Voltage Rating In Volts Per Characteristic:
80.0 collector to emitter voltage, dc with base short-circuited to emitter and 40.0 emitter to collector voltage, floating potential, dc with base biased in reverse direction with respect to the collector
Current Rating Per Characteristic:
Between 4.00 amperes source cutoff current and 4.00 amperes source cutoff current
Maximum Operating Tempurature Per Measurement Point:
95.0 degrees celsius junction
Terminal Type And Quantity:
2 tab, solder lug and 1 case
NSN:
5961-00-754-9620
Item Name:
Hexfet Power Mosfet
Cage Code:
16758

Manufacturer Part Numbers

Part Number
Cage
RNCC
RNVC
RNAAC
Status
MSDS
SADC
Part Number:
9163055
Cage Code:
18876
RNCC:
3
RNVC:
2
RNAAC:
TX
Status:
A
MSDS:
SADC:
Part Number:
2N553
Cage Code:
21845
RNCC:
5
RNVC:
1
RNAAC:
TX
Status:
A
MSDS:
SADC:
Part Number:
2N553
Cage Code:
04713
RNCC:
5
RNVC:
1
RNAAC:
TX
Status:
A
MSDS:
SADC:
Part Number:
2N553
Cage Code:
7X677
RNCC:
C
RNVC:
1
RNAAC:
ZZ
Status:
A
MSDS:
SADC:
9X
Part Number:
2N553
Cage Code:
24617
RNCC:
5
RNVC:
9
RNAAC:
XX
Status:
A
MSDS:
SADC:

Part Identification

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Part Materials

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Privacy | Terms

Definition Definition of approved item name (AIN): "Hexfet Power Mosfet"

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

MOE Major Organizational Entities

Entity
DSOR
User:
FRANCE France
DSOR:
User:
PORTUGAL Portugal
DSOR:
User:
TURKEY Turkey
DSOR:
Import / Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Classification: Semiconductor devices, nesoi


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