2N652A

Transistor

NSN 5961-00-043-4244

DEMIL

Shelf Life

UOM

NIIN

Demil:

Shelf Life:

N/A

UOM:

1 EA

NIIN:

000434244

Product Technical Spec.

Inclosure Material:

Metal

Overall Length:

0.250 inches

Terminal Length:

1.500 inches

Overall Diameter:

0.359 inches

Internal Configuration:

Junction contact

Internal Junction Configuration:

Pnp

Mounting Method:

Terminal

Terminal Circle Diameter:

0.200 inches

Features Provided:

Hermetically sealed case

Semiconductor Material:

Germanium

Voltage Rating In Volts Per Characteristic:

45.0 breakdown voltage, collector-to-base, emitter open and 30.0 collector to emitter voltage/static/base open and 30.0 breakdown voltage, emitter-to-base, collector open

Current Rating Per Characteristic:

500.00 milliamperes collector current, dc

Power Rating Per Characteristic:

200.0 milliwatts collector power dissipation

Terminal Type And Quantity:

3 uninsulated wire lead

NSN:

5961-00-043-4244

Item Name:

Hexfet Power Mosfet

Cage Code:

04713

Cross Referenced Parts

Part Number

Cage

RNCC

RNVC

RNAAC

Status

MSDS

SADC

Part Number:

352-0276-000

Cage Code:

13499

RNCC:

RNVC:

RNAAC:

Status:

MSDS:

SADC:

Part Identification

INC

FIIG

Concept No.

App. Key

Cond. Code

Status

INC:

20588

FIIG:

A110A0

Concept No.:

App. Key:

Cond. Code:

Status:

Part Materials

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators

HMIC

PMIC

ESD/EMI

ENAC

MMAC

CRITL

HMIC:

PMIC:

ESD:

MMAC:

CRITL:

Freight Classification

NMFC

UFC

LTL

LCL

WCC

TCC

SHC

ACC

NMFC:

063025

UFC:

34525

LTL:

RATING VARIABLE

LCL:

WCC:

658

TCC:

SHC:

ACC:

Instruments/Radio

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Pricing & Availability

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Definition Definition of approved item name (AIN): "Hexfet Power Mosfet"

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.