Metal-epoxy pkt, 2.275 in. Max lg.; 0.750 in. Max log.; 0.750 in max w; 0.505 in. Max h; 5 terminals
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6130-01-461-8752
NSN 4140-01-145-4474
NSN 5996-01-364-4879
NSN 6610-01-115-9171
NSN 5930-00-653-1710
NSN 5975-01-328-7481
NSN 6610-01-367-5110
NSN 5999-01-294-0132
NSN 5999-00-202-0788
NSN 5910-01-026-7585
NSN 5910-00-435-6799
NSN 5960-01-347-6791