Metal-epoxy pkt, 2.275 in. Max lg.; 0.750 in. Max log.; 0.750 in max w; 0.505 in. Max h; 5 terminals
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5945-01-268-2243
NSN 6145-01-146-4106
NSN 5905-01-632-2169
NSN 5990-01-432-4984
NSN 4140-00-322-2068
NSN 6150-01-441-3626
NSN 4140-01-258-6301
NSN 6320-00-845-3261
NSN 6685-01-147-4532
NSN 5990-00-821-1509
NSN 5855-01-350-2454
NSN 6645-01-179-0243