Silicon bridge rectifier; piv 200 volts; rms 70 volts; mfv at 10a 1.1 volts; one cycle surge current 375 amps; 2.000 in. Lg; 1.000 in. W; 1.200 in. Hg; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5855-01-163-8152
NSN 5925-00-275-7599
NSN 5985-00-737-7683
NSN 6105-01-468-5102
NSN 6110-01-377-6557
NSN 4140-01-068-3500
NSN 4140-00-057-7298
NSN 6650-00-074-2445
NSN 6320-00-174-1362
NSN 6610-00-802-8057
NSN 5985-00-135-7118
NSN 6135-01-238-2878