Silicon bridge rectifier; piv 200 volts; rms 70 volts; mfv at 10a 1.1 volts; one cycle surge current 375 amps; 2.000 in. Lg; 1.000 in. W; 1.200 in. Hg; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6610-01-033-2402
NSN 6105-01-649-9136
NSN 6320-01-006-6138
NSN 5996-01-570-4583
NSN 6145-01-588-4838
NSN 7035-01-326-3875
NSN 5960-01-211-8344
NSN 5895-01-471-2079
NSN 5895-01-634-0630
NSN 5915-01-478-0914
NSN 5965-01-325-7721
NSN 6105-01-536-1572