Efull wave bridge rectifier; silicon; 1.145 in. Max square; 0.193 in. diameter through center hole; 4 tinned plate terminals; corrosion resistant sealed case; m55 degrees to p150 degrees c operating junction temp
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5905-01-414-2641
NSN 7035-00-445-9657
NSN 5999-01-633-3040
NSN 5975-00-551-3152
NSN 5935-00-398-1584
NSN 5965-00-356-3838
NSN 5895-00-680-9784
NSN 5835-01-529-3050
NSN 5935-01-254-3776
NSN 6685-01-040-0064
NSN 6610-01-483-1317
NSN 6105-01-004-7890