Efull wave bridge rectifier; silicon; 1.145 in. Max square; 0.193 in. diameter through center hole; 4 tinned plate terminals; corrosion resistant sealed case; m55 degrees to p150 degrees c operating junction temp
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5996-01-323-7763
NSN 5999-01-535-7356
NSN 6105-00-456-1433
NSN 6220-00-205-2040
NSN 5975-01-328-7481
NSN 6150-01-481-4183
NSN 6105-01-396-4421
NSN 5975-01-167-5991
NSN 5990-01-021-3665
NSN 5998-01-050-2615
NSN 5950-01-571-1699
NSN 5905-01-486-9029