Single phase, full wave bridge; silicon; individual diodes shall be hermetically sealsed; operating temp m65 to p175 degrees celsius; 4 lead terminals 1.250 in. Lg; 0.032 in. Dia; 0.688 in. Lg body
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6130-00-776-0157
NSN 5935-01-495-0756
NSN 5960-01-381-8475
NSN 6110-01-013-9313
NSN 5920-01-464-4373
NSN 5935-00-339-2189
NSN 5965-01-412-5946
NSN 7035-01-515-3490
NSN 5920-01-454-9374
NSN 5905-00-439-5808
NSN 5998-01-094-7241
NSN 5935-01-367-7186