Silicon diode bridge assembly; full wave; temp range m55 degrees c to 150 degrees c; 0.650 in. Lg; 0.450 in. W; 0.210 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5965-00-900-8102
NSN 6620-01-380-2905
NSN 6645-00-274-1279
NSN 6105-01-561-6972
NSN 4140-01-089-7213
NSN 6220-01-447-4854
NSN 6150-00-281-9482
NSN 5920-01-381-9310
NSN 5935-01-434-1623
NSN 5999-01-115-7556
NSN 6130-00-126-9868
NSN 5990-00-140-4559