Silicon diode bridge assembly; full wave; temp range m55 degrees c to 150 degrees c; 0.650 in. Lg; 0.450 in. W; 0.210 in. H
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5905-00-388-0188
NSN 6135-01-471-7325
NSN 5985-01-476-8827
NSN 5945-01-356-7577
NSN 5835-00-286-5432
NSN 6220-01-068-3100
NSN 5990-01-054-3332
NSN 5855-01-325-3380
NSN 5950-00-966-4919
NSN 5985-01-025-6051
NSN 6610-01-268-4191
NSN 5915-01-494-8715