20 amp; three phase bridge; 100 peak inverse voltage; wire loop terminals; 2.250 in. Lg max 0.750 in. W max 0.505 in. H max; 2 mtg holes 0.169 in. Diameter spaced 1.870 in. C to c; fast recovery time
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5975-00-756-8311
NSN 6220-01-212-4088
NSN 5835-01-383-1313
NSN 5930-01-359-7744
NSN 5960-00-230-8579
NSN 6620-01-518-8994
NSN 6610-00-807-6620
NSN 7035-00-421-8710
NSN 6610-01-398-1094
NSN 6105-01-214-8870
NSN 5990-01-082-3807
NSN 5925-01-180-9353