20 amp; three phase bridge; 100 peak inverse voltage; wire loop terminals; 2.250 in. Lg max 0.750 in. W max 0.505 in. H max; 2 mtg holes 0.169 in. Diameter spaced 1.870 in. C to c; fast recovery time
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5925-00-660-6369
NSN 5835-01-461-8184
NSN 6645-01-463-3441
NSN 5985-00-960-0141
NSN 5915-01-091-3537
NSN 5920-01-115-1739
NSN 6145-01-026-0030
NSN 6150-00-596-8766
NSN 5930-00-932-4244
NSN 6110-01-392-0498
NSN 5910-00-292-0048
NSN 6135-01-582-1283