BCY55

Transistor

NSN 5961-00-496-8315

DEMIL

Shelf Life

UOM

NIIN

Demil:

DEMIL/MLI

Shelf Life:

UOM:

NIIN:

004968315

Product Features

Junction pattern arrangement: npn

Technical Specifications of NSN

Inclosure Material:

Plastic

Overall Length:

0.787 inches

Overall Height:

0.276 inches

Overall Width:

0.512 inches

Mounting Facility Quantity:

Internal Configuration:

Junction contact

Mounting Method:

Unthreaded hole

Features Provided:

Hermetically sealed case

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

45.0 breakdown voltage, collector-to-base, emitter open

Current Rating Per Characteristic:

30.00 milliamperes source cutoff current

Power Rating Per Characteristic:

300.0 milliwatts small-signal input power, common-collector

Maximum Operating Tempurature Per Measurement Point:

125.0 degrees celsius junction

Terminal Type And Quantity:

6 uninsulated wire lead

NSN:

5961-00-496-8315

Item Name:

Transistor,silicon

Cage Code:

73445

Other Related Parts

Part Number

Cage

RNCC

RNVC

RNAAC

Status

MSDS

SADC

Part Number:

622132612104

Cage Code:

0000V

RNCC:

RNVC:

RNAAC:

Status:

MSDS:

SADC:

Part Identification

INC

FIIG

Concept No.

App. Key

Cond. Code

Status

INC:

20588

FIIG:

A110A0

Concept No.:

App. Key:

Cond. Code:

Status:

Part Materials

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators

HMIC

PMIC

ESD/EMI

ENAC

MMAC

CRITL

HMIC:

PMIC:

ESD:

MMAC:

CRITL:

Freight Classification

NMFC

UFC

LTL

LCL

WCC

TCC

SHC

ACC

NMFC:

063025

UFC:

34525

LTL:

RATING VARIABLE

LCL:

100.0

WCC:

658

TCC:

SHC:

ACC:

Instruments/Radio

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Pricing & Availability

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Definition Definition of approved item name (AIN): "Silicon Transistor"

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.