N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using trench technology. The device features very low on-state resistance and has integral zener diodes giving esd protection up to 2kv. It is intended for use in automotive and general purpose switching applications.
No other part numbers with same form, fit, and function found.
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Classification: Semiconductor devices, nesoi
NSN 6130-00-470-7825
NSN 6240-00-334-6766
NSN 6240-00-443-8000
NSN 6145-01-128-1156
NSN 2925-01-298-2674
NSN 4140-01-173-2994
NSN 5945-01-363-8081
NSN 5905-01-372-1950
NSN 6320-00-521-9350
NSN 6135-00-471-5356
NSN 6645-00-851-6654
NSN 5965-01-227-4517