4semi-conductor device assembly rectifier half-wave; 6.500 in. Lg; 2.200 in. Dia; 4 pin terminals; silicon; encapsulated; 25 kv peak inverse voltage; 0.3 amps min output current; m40 degrees c to p55 degrees c operating temp; 7500 feet operating altitude
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5950-01-435-5422
NSN 5905-00-759-9068
NSN 5950-01-213-9351
NSN 6620-01-386-5914
NSN 5905-01-369-0597
NSN 4140-00-315-0146
NSN 5985-01-254-2976
NSN 6110-01-188-8017
NSN 5998-01-449-1901
NSN 5950-01-553-0384
NSN 5835-01-522-9881
NSN 5925-01-038-7925