4semi-conductor device assembly rectifier half-wave; 6.500 in. Lg; 2.200 in. Dia; 4 pin terminals; silicon; encapsulated; 25 kv peak inverse voltage; 0.3 amps min output current; m40 degrees c to p55 degrees c operating temp; 7500 feet operating altitude
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5930-00-236-3514
NSN 5915-01-559-8039
NSN 6110-01-140-0863
NSN 5998-01-100-1957
NSN 5999-01-519-2442
NSN 6650-00-256-9059
NSN 6645-01-547-4607
NSN 5945-01-033-1533
NSN 5945-01-249-2725
NSN 5990-01-182-5913
NSN 2925-01-545-2717
NSN 5895-00-960-0568