Silicon three phase bridge rectifier with black anodized aluminum case; working peak reverse voltage 600.0 volts; average forward current 5.0 amps; operating temp range from m55.0 degrees c to p150.0 degrees c; 1.280 in. Max lg; 0.470 in. Max w; 0.375 in. Max w; 5 turret type terminals 0.225 in. Lg; storeage temp range: m55.0 to p150.0 degrees celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6145-01-646-1232
NSN 6220-01-247-2290
NSN 6110-01-391-2710
NSN 6105-01-298-3636
NSN 5990-01-100-1840
NSN 6645-01-348-3359
NSN 5990-01-027-8260
NSN 7035-01-003-9142
NSN 4140-01-461-7885
NSN 6320-00-108-7049
NSN 5930-01-327-4699
NSN 5910-00-235-0043