The high power radar transistor device is designed for l-band radar systems operating over the instantaneous bandwidth of 1.210-1.400 ghz, while operating in class c mode this common base device supplies a of 370 watts of peak pulse power
No other part numbers with same form, fit, and function found.
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Classification: Semiconductor devices, nesoi
NSN 6650-01-181-6037
NSN 7035-01-194-9482
NSN 6645-01-622-6161
NSN 5920-00-876-8989
NSN 5990-01-378-7349
NSN 5930-00-319-4719
NSN 2925-00-833-9466
NSN 5975-01-581-6708
NSN 5950-00-914-3570
NSN 5930-00-498-1882
NSN 6620-01-658-8133
NSN 5945-01-249-0931