Silicon; 5.000 in. Lg; 0.750 in. Max h; 0.750 in. Max w; two 0.375 in. Max h turret type terminals; two 6-32 thd, 0.250 in. D, mtg holes located 4.500 in. C to c along lg; 15000 volts peak inverse voltage; 21 volts forward voltage, dc; 1.00 amps
No other part numbers with same form, fit, and function found.
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6130-00-522-0334
NSN 5960-01-170-4057
NSN 4140-01-608-3148
NSN 5998-01-626-7757
NSN 5855-01-534-6449
NSN 6130-01-321-7487
NSN 5998-00-301-3845
NSN 5999-01-634-0576
NSN 5950-01-041-1387
NSN 7035-00-541-8516
NSN 5990-01-093-8328
NSN 6145-00-728-4026