Designed for high power pulse iff, dme, and tacan; applications; 200 w (typ.) iff 1030 - 1090 mhz; 150 w (min.) dme 1025 - 1150 mhz; 140 w (typ.) tacan 960 - 1215 mhz; 8.2 db gain; refractory gold metallization; ballasting andlow thermal resistance for reliability and ruggedness; 30: 1 load vswr capability at specified operating conditions;
No other part numbers with same form, fit, and function found.
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Classification: Semiconductor devices, nesoi
NSN 6135-00-145-8884
NSN 5945-00-568-9724
NSN 5895-00-643-3980
NSN 6650-01-144-8436
NSN 5915-01-460-7176
NSN 6620-00-115-9050
NSN 2925-00-749-8893
NSN 5935-00-144-4395
NSN 6130-01-324-0007
NSN 6145-01-349-7756
NSN 5855-00-548-4742
NSN 2925-00-770-4713