Full-wave; three phase; 2.000 in. Lg o/a; 0.630 in w o/a; silicon semi-conductor matl; black dyed anodized aluminum case and finish; hermetically sealed enclosure; 75 grams max weight; m55 degrees p150 degrees c temp range; copper terminals
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 2925-01-166-4589
NSN 5930-01-265-3080
NSN 5998-00-679-1810
NSN 6240-01-380-2127
NSN 7035-00-916-9380
NSN 5975-01-469-3161
NSN 6150-01-196-0179
NSN 5998-00-814-8394
NSN 6135-01-528-6896
NSN 5965-01-029-5222
NSN 5905-01-088-4678
NSN 6105-01-089-4956