Q-1002

Transistor

NSN 5961-00-985-9134

DEMIL

Shelf Life

UOM

NIIN

Demil:

Shelf Life:

N/A

UOM:

1 EA

NIIN:

009859134

Product Features

Junction pattern arrangement: pnp

Technical Specifications of NSN

Inclosure Material:

Metal

Overall Length:

Between 0.240 inches and 0.260 inches

Terminal Length:

1.500 inches

Overall Diameter:

Between 0.335 inches and 0.370 inches

Internal Configuration:

Junction contact

Mounting Method:

Terminal

Terminal Circle Diameter:

0.200 inches

Features Provided:

Hermetically sealed case

Semiconductor Material:

Germanium

Voltage Rating In Volts Per Characteristic:

-40.0 collector to base voltage, dc and -35.0 collector to emitter voltage, dc and -25.0 emitter to base voltage, instantaneous

Current Rating Per Characteristic:

-200.00 milliamperes source cutoff current and 200.00 milliamperes source cutoff current blank

Power Rating Per Characteristic:

150.0 milliwatts small-signal input power, common-collector

Maximum Operating Tempurature Per Measurement Point:

85.0 degrees celsius junction

Test Data Document:

81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).

Terminal Type And Quantity:

3 uninsulated wire lead

Specification Data:

81349-mil-s-19500/20 government specification

NSN:

5961-00-985-9134

Item Name:

Hexfet Power Mosfet

Cage Code:

06692

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04713

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05157

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04655

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16236

RNCC:

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RNAAC:

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MSDS:

SADC:

Part Number:

5961009859134

Cage Code:

A00AM

RNCC:

RNVC:

RNAAC:

Status:

MSDS:

SADC:

Part Identification

INC

FIIG

Concept No.

App. Key

Cond. Code

Status

INC:

20588

FIIG:

A110A0

Concept No.:

App. Key:

Cond. Code:

Status:

Part Materials

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators

HMIC

PMIC

ESD/EMI

ENAC

MMAC

CRITL

HMIC:

PMIC:

ESD:

MMAC:

CRITL:

Packaging & Shipping

Est. Pack Size

Est. Pack Weight

Est. Item Weight

Est. Item Dim.

Pack Size:

Paclk Weight:

0.1000lbs

Item Weight:

Item Dim:

OPI

SPI No.

SPI Rev.

SPC Mkg.

LVL A

LVL B

OPI:

SPI No.:

SPI Rev.:

SPC Mkg:

LVL_A:

LVL_B:

Freight Classification

NMFC

UFC

LTL

LCL

WCC

TCC

SHC

ACC

NMFC:

063025

UFC:

34525

LTL:

RATING VARIABLE

LCL:

WCC:

658

TCC:

SHC:

ACC:

Instruments/Radio

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Pricing & Availability

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Definition Definition of approved item name (AIN): "Hexfet Power Mosfet"

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.