RHRP860

Diode Semiconductor Device

NSN 5961-01-598-9426

DEMIL
Shelf Life
UOM
NIIN
Demil:
NO
Shelf Life:
UOM:
NIIN:
015989426

Product Features

This diode is of silicon nitride passivated ion-implanted epitaxial planar construction and takes 8 amps.

Product Technical Spec.

Mounting Facility Quantity:
1
Mounting Method:
Unthreaded hole
Semiconductor Material:
Silicon alloy
Voltage Rating In Volts Per Characteristic:
400.0 repetitive peak reverse voltage and 600.0 repetitive peak reverse voltage and 400.0 working peak reverse voltage and 600.0 working peak reverse voltage
Part Name Assigned By Controlling Agency:
Hyperfast diode
NSN:
5961-01-598-9426
Item Name:
Diode,avalanche
Cage Code:
07933

Cross Referenced Parts

No other part numbers with same form, fit, and function found.

Part Identification

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Part Materials

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Privacy | Terms

Definition Definition of approved item name (AIN): "Avalanche Diode"

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

MOE Major Organizational Entities

Entity
DSOR
User:
REPUBLIC OF KOREA Republic of Korea
DSOR:
Import / Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Classification: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less


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