3 phase bridge rectifier; 100.0 piv vdc; 25.0 amp at 25.0 degrees c; derated 18.0 amp at 100.0 degrees c; operating temp m55.0 to p150.0 degrees c; dim. 2.250 in. Lg; 0.750 in. W; 1.000 in. Hgt
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6685-01-037-6371
NSN 5915-00-237-2627
NSN 6685-01-166-5302
NSN 5935-01-534-2886
NSN 6150-00-124-7247
NSN 5975-01-416-0394
NSN 5998-01-655-4240
NSN 5965-01-420-6613
NSN 6220-01-475-8620
NSN 5990-01-417-4402
NSN 5835-00-238-1516
NSN 5960-01-369-8666