Three phase bridge; common cathode; silicon; m55 to p150 degrees c operating temp; 200 vdc each diode; 0.880 in. Max lg; test data document: a81349-mil-s-19500/420
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5950-00-420-7801
NSN 7035-00-270-5519
NSN 6150-00-173-9283
NSN 2925-00-010-9609
NSN 5915-01-437-8858
NSN 6105-00-740-7757
NSN 6610-01-408-9557
NSN 6320-01-052-2118
NSN 5960-01-252-8821
NSN 5895-01-178-4061
NSN 4140-01-246-4267
NSN 6685-00-338-2796