Single-phase; silicon bridge; current rating 18 amps at 55 degrees c; 1.124 in. Lg; 1.124 in. W; 0.406 in. H; one 0.193 in. Diameter mounting hole
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5920-00-984-4428
NSN 5990-01-170-6081
NSN 6145-00-653-2013
NSN 5960-01-619-9361
NSN 5990-00-781-6762
NSN 5990-01-044-4767
NSN 5999-01-501-7176
NSN 6645-01-521-3180
NSN 5996-01-367-2930
NSN 5925-01-555-8524
NSN 5945-00-935-6922
NSN 5835-01-136-3394