Silicon; single phase full wave bridge; 2000v peak inverse voltage; 1.5 amp average rectifier current at peak inverse voltage is 2 ua at 25 degrees c and 40 ua at 100 degrees c; recurrent surge at 25 degrees c is 10 amp; regular reverse recovery time; m55.0 to p150.0 degrees c operating temp; 4 solid silver lead; dim. Of leads 0.031 in. Dia; 0.875 in. Min lg; molded case is 0.620 in. Lg; 0.420 in. W; 0.180 in. H 55.0 to 150.0 degrees c
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6685-01-092-3911
NSN 6105-01-519-3558
NSN 6610-00-581-0771
NSN 7035-01-112-9375
NSN 5960-01-048-4885
NSN 6220-01-336-7414
NSN 5905-01-562-2833
NSN 6620-00-035-5813
NSN 6240-01-487-4386
NSN 5895-00-825-7334
NSN 6150-01-516-4788
NSN 5925-01-547-3271