Silicon multi-cell rectifier, double cased, external molded case, internal metal case, hermetically sealed, copper plated base, base 3.000 in. Lg; 3.000 in. W; 0.260 in. H; molded body dim. 2.200 in. Dia; 0.740 in. H; four 0.281 in. Diameter mtg holes in base spaced on 2.510 in. Mtg centers, one lug terminal, m65.0 to p190.0 degrees c operating temp; storage temp range: minus 65.0 to 190.0 degrees celcius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6620-01-069-8594
NSN 2925-00-333-4702
NSN 5960-01-298-4143
NSN 4140-00-839-4911
NSN 5965-01-554-1271
NSN 5895-01-495-1975
NSN 2925-00-295-8109
NSN 6685-01-657-9086
NSN 5960-01-292-6062
NSN 6105-01-500-7599
NSN 6220-01-578-1424
NSN 6320-00-894-1644