Silicon fast recovery bridge rectifier, 100 peak inverse voltage, aluminum case, 0.750 in. Lg; 0.750 in. W; 0.250 in. Max h; four turret terminals spaced on 0.400 in. By 0.400 in. Centers; one 0.147 in. Diameter mtg hole counterbored 0.235 in. Diameter by 0.150 in. Deep; mtg hole centrally located through top to bottom of case
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5910-00-884-5267
NSN 5999-01-168-8788
NSN 6135-01-022-5427
NSN 5855-00-403-1031
NSN 5950-01-543-4195
NSN 6685-00-517-7132
NSN 5985-01-546-6113
NSN 5960-00-223-3849
NSN 5990-00-728-6736
NSN 5920-01-431-7617
NSN 4140-01-350-3277
NSN 5985-01-238-6944