Silicon; single phase; full wave bridge; 50 peak inverse voltage; 38 rms voltage; 1.5 amp average rectified current at 25 degrees c and 1.05 amp at 100 degrees c; 10 amps recurrent surge current at 25 degrees c; medium recovery 1 microsecond; hermetically sealed junctions; molded case; 0.875 in. Dia; 0.250 in. H; 4 solder stud terminals 0.130 in. h; one 0.144 in. Diameter unthreaded mtg hole
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6620-00-868-2147
NSN 6105-01-024-9425
NSN 5905-01-467-2765
NSN 5960-01-632-6576
NSN 6105-01-422-0510
NSN 5910-00-264-8400
NSN 6150-00-421-8774
NSN 6645-01-184-7419
NSN 6320-01-585-8468
NSN 6110-01-195-3631
NSN 6145-00-233-6010
NSN 5990-01-300-7801