Silicon, single phase full wave bridge; 200v peak inverse voltage; 140v rms voltage; 1.5 amp average rectified current at 25 degrees c and 1.05 amp at 100 degrees c; 10 amp recurrent surge current at 25 degrees c; hermetically sealed units; molded case; 0.875 in. Dia; 0.250 in. H; 4 solder stud type terminals 0.137 in. Max h; terminals equally spaced on 0.625 in. Diameter circle; one 0.144 in. Diameter unthreaded mtg hole counterbored 0.310 in. In. Diameter by 0.125 in. Deep through center of case; m55.0 to p150.0 degrees c operating temp; storage temp range: minus 55.0 to 150.0 degrees celcius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6150-01-025-0423
NSN 5950-01-556-1635
NSN 2925-01-660-0669
NSN 6150-00-246-6673
NSN 5985-00-192-4669
NSN 6320-01-370-5222
NSN 5945-00-919-6032
NSN 5960-01-553-4557
NSN 5950-00-707-6107
NSN 5915-00-203-5890
NSN 5835-01-346-8909
NSN 5920-01-174-8540