Silicon, single phase full wave bridge; 200v peak inverse voltage; 140v rms voltage; 1.5 amp average rectified current at 25 degrees c and 1.05 amp at 100 degrees c; 10 amp recurrent surge current at 25 degrees c; hermetically sealed units; molded case; 0.875 in. Dia; 0.250 in. H; 4 solder stud type terminals 0.137 in. Max h; terminals equally spaced on 0.625 in. Diameter circle; one 0.144 in. Diameter unthreaded mtg hole counterbored 0.310 in. In. Diameter by 0.125 in. Deep through center of case; m55.0 to p150.0 degrees c operating temp; storage temp range: minus 55.0 to 150.0 degrees celcius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5999-00-414-5282
NSN 5990-01-660-9694
NSN 5998-01-364-8133
NSN 5910-01-599-9338
NSN 6110-01-419-7612
NSN 6135-01-246-0308
NSN 5895-01-350-9342
NSN 6610-01-082-7332
NSN 5915-00-372-4522
NSN 4140-01-339-2829
NSN 6610-01-107-7576
NSN 5925-00-785-6260