SJ6600-H1

Transistor

NSN 5961-01-102-0439

DEMIL

Shelf Life

UOM

NIIN

Demil:

Shelf Life:

N/A

UOM:

1 EA

NIIN:

011020439

Product Features

Junction pattern arrangement: npn

Technical Specifications of NSN

Inclosure Material:

Metal

Overall Length:

0.340 inches

Overall Diameter:

0.620 inches

Mounting Facility Quantity:

Internal Configuration:

Junction contact

Joint Electronic Device Engineering Council/jedec/case Outline Designation:

To-66

Electrode Internally-electrically Connected To Case:

Collector

Mounting Method:

Unthreaded hole

Features Provided:

Hermetically sealed case

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

100.0 collector to base voltage/static/emitter open and 80.0 collector to emitter voltage/static/base open and 6.0 emitter to base voltage, static, collector open

Current Rating Per Characteristic:

Between 2.00 amperes source cutoff current and 4.00 amperes source cutoff current

Power Rating Per Characteristic:

25.0 watts small-signal input power, common-collector preset

Maximum Operating Tempurature Per Measurement Point:

200.0 degrees celsius ambient air

Test Data Document:

81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).

Terminal Type And Quantity:

1 case and 2 pin

Specification Data:

81349-mil-s-19500/518 government specification

NSN:

5961-01-102-0439

Item Name:

Hexfet Power Mosfet

Cage Code:

04713

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383AS223

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81349

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Cage Code:

81349

RNCC:

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SADC:

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Cage Code:

81349

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SADC:

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81349

RNCC:

RNVC:

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Status:

MSDS:

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Cage Code:

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RNCC:

RNVC:

RNAAC:

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Part Identification

INC

FIIG

Concept No.

App. Key

Cond. Code

Status

INC:

20588

FIIG:

A110A0

Concept No.:

App. Key:

Cond. Code:

Status:

Part Materials

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators

HMIC

PMIC

ESD/EMI

ENAC

MMAC

CRITL

HMIC:

PMIC:

ESD:

MMAC:

CRITL:

Packaging & Shipping

Est. Pack Size

Est. Pack Weight

Est. Item Weight

Est. Item Dim.

Pack Size:

Paclk Weight:

0.1000lbs

Item Weight:

Item Dim:

OPI

SPI No.

SPI Rev.

SPC Mkg.

LVL A

LVL B

OPI:

SPI No.:

SPI Rev.:

SPC Mkg:

LVL_A:

LVL_B:

Freight Classification

NMFC

UFC

LTL

LCL

WCC

TCC

SHC

ACC

NMFC:

063025

UFC:

34525

LTL:

RATING VARIABLE

LCL:

WCC:

72D

TCC:

SHC:

ACC:

Instruments/Radio

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Pricing & Availability

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Definition Definition of approved item name (AIN): "Hexfet Power Mosfet"

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.