Silicon; single phase full wave bridge; 600v peak inverse voltage; 420v rms voltage; 1.5 amp average rectified current at 25 degrees c and 1.05 amp at 100 degrees c; 10 amp recurrent surge current at 25 degrees c; hermetically sealed units; molded case; 0.875 in. Dia; 0.250 in. H; 4 solder stud type terminals 0.137 in. Max h; terminals equally spaced on 0.625 in. Diameter circle; 0ne 0.144 in. Diameter unthreaded mtg hole counterbored 0.310 in. Diameter by 0.125 in. Deep through center of case; m55.0 to p150.0 degrees c operating temp; storage temp range: m55.0 to p150.0 degrees celcius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5905-01-416-9419
NSN 5910-01-394-6463
NSN 6610-00-416-9830
NSN 6110-01-622-6039
NSN 5895-00-514-2905
NSN 5999-00-296-4908
NSN 7035-00-064-7008
NSN 5835-01-424-0054
NSN 5920-01-195-2299
NSN 5996-01-181-5438
NSN 6620-01-348-1893
NSN 6610-01-096-8746