SM-B-680344

Transistor

NSN 5961-01-147-2384

DEMIL
Shelf Life
UOM
NIIN
Demil:
NO
Shelf Life:
UOM:
NIIN:
011472384

Technical Specifications of NSN

Inclosure Material:
Metal
Overall Length:
0.210 inches
Terminal Length:
0.500 inches
Overall Diameter:
0.230 inches
End Application:
Cecom equip 80063
Internal Configuration:
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation:
To-18
Electrode Internally-electrically Connected To Case:
Collector
Internal Junction Configuration:
Npn
Mounting Method:
Terminal
Terminal Circle Diameter:
0.100 inches
Features Provided:
Hermetically sealed case
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
75.0 breakdown voltage, collector-to-base, emitter open and 40.0 breakdown voltage, collector-to-emitter, base open and 5.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic:
800.00 milliamperes source cutoff current
Power Rating Per Characteristic:
500.0 milliwatts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point:
200.0 degrees celsius junction
Terminal Type And Quantity:
3 uninsulated wire lead
NSN:
5961-01-147-2384
Item Name:
Hexfet Power Mosfet
Cage Code:
80063

Other Related Parts

Part Number
Cage
RNCC
RNVC
RNAAC
Status
MSDS
SADC
Part Number:
2N2222A
Cage Code:
04713
RNCC:
5
RNVC:
1
RNAAC:
TX
Status:
A
MSDS:
SADC:
Part Number:
2N2222A
Cage Code:
56289
RNCC:
5
RNVC:
1
RNAAC:
TX
Status:
A
MSDS:
SADC:

Part Identification

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Part Materials

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
SPI No.:
SPI Rev.:
SPC Mkg:
99
LVL_A:
E
LVL_B:
Q

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Pricing & Availability

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Privacy | Terms

Definition Definition of approved item name (AIN): "Hexfet Power Mosfet"

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Import / Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Classification: Semiconductor devices, nesoi


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