Repetitive peak forward off state and reverse voltage: 1200v min, 1600v max; non repetitive peak reverse voltage: 1300v min, 1700 max; manimum rms on state current: 120a; on state voltage: 1.9v max; gate trigger current: 120ma
A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Classification: Thyristors, diacs & triacs, other than photosensitive devices, nesoi
NSN 6220-01-014-5351
NSN 6685-01-098-6645
NSN 6320-01-652-3806
NSN 5950-01-423-7465
NSN 5950-00-836-3707
NSN 5910-01-169-2076
NSN 6130-01-067-1687
NSN 6650-01-253-5654
NSN 6105-01-110-9896
NSN 6240-01-199-7653
NSN 5975-00-266-2029
NSN 5855-00-361-0167