Repetitive peak forward off state and reverse voltage: 1200v min, 1600v max; non repetitive peak reverse voltage: 1300v min, 1700 max; manimum rms on state current: 120a; on state voltage: 1.9v max; gate trigger current: 120ma
A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Classification: Thyristors, diacs & triacs, other than photosensitive devices, nesoi
NSN 6145-01-364-9896
NSN 6650-01-528-7570
NSN 6645-01-432-7026
NSN 6130-01-275-6335
NSN 6150-01-360-5880
NSN 5990-01-094-7740
NSN 6645-01-629-9657
NSN 5985-01-288-9287
NSN 5998-00-776-0163
NSN 5930-01-185-2607
NSN 2925-00-707-6770
NSN 6685-01-482-4916