Repetitive peak forward off state and reverse voltage: 1200v min, 1600v max; non repetitive peak reverse voltage: 1300v min, 1700 max; manimum rms on state current: 120a; on state voltage: 1.9v max; gate trigger current: 120ma
A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Classification: Thyristors, diacs & triacs, other than photosensitive devices, nesoi
NSN 6130-01-423-1630
NSN 5998-01-310-4175
NSN 5920-01-648-2686
NSN 5996-00-351-2369
NSN 6105-00-078-9372
NSN 5965-01-352-7257
NSN 7035-01-215-2449
NSN 5975-01-411-9347
NSN 5960-01-476-5686
NSN 6130-01-270-6325
NSN 5998-01-281-9636
NSN 4140-00-136-9214