Metal case; 60.0 v0lts; 30.00 amp; 250.0 millawatts; 125 degrees c operating junction temp range
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5945-01-256-7983
NSN 5920-00-312-7872
NSN 6650-00-255-8269
NSN 5950-00-342-3494
NSN 6610-01-024-3065
NSN 5910-00-848-8833
NSN 5920-01-040-0425
NSN 5915-01-160-7123
NSN 5895-01-179-3877
NSN 5975-01-271-5668
NSN 5835-00-660-4523
NSN 6135-01-341-5324