High voltage diffused silicon power rectifier; peak reverse voltage 6.000v; average forward current at 40 degrees c 1.5 amps; max forward voltage drop at 25 degrees c 6v; o/a lg 3.000 in.; o/a w 1.000 in. Min; 2 tab solder lug terminals
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5975-00-719-9793
NSN 5990-01-215-5997
NSN 2925-01-430-4206
NSN 5965-01-590-5822
NSN 5905-01-153-2512
NSN 5935-00-508-9016
NSN 4140-00-618-8855
NSN 2925-01-262-1418
NSN 5835-01-576-9013
NSN 2925-01-424-0235
NSN 5930-01-447-6334
NSN 5998-01-471-1253