High voltage diffused silicon power rectifier; peak reverse voltage 6.000v; average forward current at 40 degrees c 1.5 amps; max forward voltage drop at 25 degrees c 6v; o/a lg 3.000 in.; o/a w 1.000 in. Min; 2 tab solder lug terminals
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5895-00-763-6246
NSN 5925-01-585-2259
NSN 5925-00-127-1436
NSN 5905-01-363-9891
NSN 6645-01-457-8642
NSN 6240-01-114-8099
NSN 5945-01-364-1178
NSN 5915-01-561-3227
NSN 5835-01-553-6772
NSN 5945-01-187-8814
NSN 5855-00-051-2792
NSN 6610-01-595-7449