Qsilicon; single phase full wave fast recovery bridge rectifier; 200v breakdown voltage; m55 degrees c to p150 degrees c operating temp range; 0.765 in. Square mtg flange; 4 terminals; storage temp range: m55.0 to p150.0 dec celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5975-01-010-4065
NSN 5985-01-516-2217
NSN 5935-00-232-2592
NSN 5835-01-017-7486
NSN 6150-01-074-5582
NSN 6320-01-089-9086
NSN 5990-00-160-1176
NSN 6150-00-972-8063
NSN 5950-01-215-2168
NSN 5925-01-594-1873
NSN 6645-00-928-7208
NSN 5905-00-513-9946