Qsilicon; single phase full wave fast recovery bridge rectifier; 200v breakdown voltage; m55 degrees c to p150 degrees c operating temp range; 0.765 in. Square mtg flange; 4 terminals; storage temp range: m55.0 to p150.0 dec celsius
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6620-01-486-5123
NSN 6145-01-127-9478
NSN 5835-01-055-6063
NSN 5950-01-372-4293
NSN 5935-00-127-0120
NSN 5925-01-220-6147
NSN 6220-00-599-4100
NSN 5998-01-394-6111
NSN 6320-01-123-6814
NSN 5998-00-498-8128
NSN 6610-01-482-5848
NSN 5835-01-370-4292