Xsingle-phase full-wave bridge; four diodes interconnected in a molded plastic encapsulated case, hexagon shaped case, four lug terminals, two 0.140 in. Diameter unthreaded mtg holes counterbored 0.250 by 0.125 in.; mtg holes spaced 1.700 in. Min to 1.750 in. Max c to c; m65.0 to p150.0 degrees c operating temp; 10 amp dc output current at 55 degrees c; 100v peak reverse voltage per cell; 70v sine wave rms input voltage; storage temp range: minus 65.0 to 150.0 degrees celcius; unpackaged unit weight: 92.000 grams
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 6150-00-526-3720
NSN 5985-01-065-3077
NSN 5920-00-717-6839
NSN 5855-00-198-3197
NSN 5950-01-489-7054
NSN 6135-00-488-4478
NSN 6645-01-076-4655
NSN 7035-01-305-1950
NSN 5935-00-688-4145
NSN 5975-01-284-7047
NSN 5855-01-428-9456
NSN 5998-01-600-0227