Xsingle-phase full-wave bridge; four diodes interconnected in a molded plastic encapsulated case, hexagon shaped case, four lug terminals, two 0.140 in. Diameter unthreaded mtg holes counterbored 0.250 by 0.125 in.; mtg holes spaced 1.700 in. Min to 1.750 in. Max c to c; m65.0 to p150.0 degrees c operating temp; 10 amp dc output current at 55 degrees c; 100v peak reverse voltage per cell; 70v sine wave rms input voltage; storage temp range: minus 65.0 to 150.0 degrees celcius; unpackaged unit weight: 92.000 grams
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 5965-00-167-7659
NSN 6685-00-677-9976
NSN 6220-01-418-2549
NSN 6135-01-551-0562
NSN 6110-01-415-2326
NSN 5950-01-232-3485
NSN 6150-01-302-1655
NSN 5999-00-627-5574
NSN 5905-01-200-7323
NSN 6610-01-437-2506
NSN 5975-00-269-4365
NSN 5990-00-513-0468