Silicon; metal; six phase; 1.3 volts; 3.3 ampere; minus 55 degrees c to plus 150 degrees c operating temp range; 0.995 in. Lg; 0.750 in. W; 0.448 in. H; hermetically sealed
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Classification: Diode, transistor & similar semiconductor device parts
NSN 7035-00-140-0474
NSN 5935-01-188-4324
NSN 5950-00-918-6890
NSN 6240-00-280-0186
NSN 5855-01-462-2628
NSN 5945-01-222-0506
NSN 4140-01-479-3944
NSN 6130-01-123-4126
NSN 5996-01-118-5320
NSN 5930-01-605-9239
NSN 6320-01-466-4175
NSN 6645-00-003-3332